Highly accurate optical material parameter determination with THz time-domain spectroscopy

Material parameter estimation with terahertz time-domain spectroscopy.

Imaging systems based on terahertz (THz) time-domain spectroscopy offer a range of unique modalities owing to the broad bandwidth, subpicosecond duration, and phase-sensitive detection of the THz pulses. Furthermore, the possibility exists for combining spectroscopic characterization or identification with imaging because the radiation is broadband in nature. To achieve this, we require novel m...

THz Reflection Spectroscopy of Explosives Measured by Time Domain Spectroscopy

Terahertz range of electromagnetic spectrum (0.1 ÷ 10) THz has focused attention of scientists for years because of many interesting features including existence of spectral fingerprints of many materials (also explosives), through clothing imaging and safety for human being. Such advantages are of great importance for biochemical, defense and security related applications. Scanning of pure exp...

THz time-domain spectroscopy and IR spectroscopy on MoS2

In the increasing research field of 2D materials such as graphene, molybdenum disulfide MoS2 has attracted great interest due to the existence of a direct bandgap in monolayer MoS2, which gives the possibility of achieving MoS2 fieldeffect transistors or optoelectronic devices. We analyzed by THz time-domain spectroscopy (THz-TDS) up to 2 THz and infrared (IR) spectroscopy, CVD-obtained MoS2 us...

Time resolved diffuse optical spectroscopy with geometrically accurate models for bulk parameter recovery.

A novel straightforward, accessible and efficient approach is presented for performing hyperspectral time-domain diffuse optical spectroscopy to determine the optical properties of samples accurately using geometry specific models. To allow bulk parameter recovery from measured spectra, a set of libraries based on a numerical model of the domain being investigated is developed as opposed to the...

Guided-wave THz time-domain spectroscopy of highly doped silicon using parallel-plate waveguides